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1.5V Drive Nch MOSFET
RT1C060UN
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive).
(1)
(2)
(3)
(4)
Abbreviated symbol : VB
Application Switching
Packaging specifications Package Code Basic ordering unit (pieces) RT1C060UN Type Taping TR 3000
Inner circuit
(8) (7) (6) (5)
2
Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a ceramic board.
Symbol VDSS VGSS
Limits 20 10 6
Unit V V A A A A W C C
(1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain
1
(1)
(2)
(3)
(4)
1 ESD PROTECTION DIODE 2 BODY DIODE
Continuous Pulsed Continuous Pulsed
ID IDP IS ISP PD Tch Tstg
*1
24 1 24 1.25 150 55 to +150
*1 *2
Thermal resistance Parameter Channel to Ambient
* Each terminal mounted on a ceramic board.
Symbol Rth (ch-a)*
Limits 100
Unit C / W
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1/5
2010.04 - Rev.A
RT1C060UN
Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) Min. 20 0.3 l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * 5.5 Typ. 20 24 28 33 870 190 85 7 30 75 20 11 2.0 2.1 Max. 10 1 1.0 28 33 39 66 S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Conditions VGS=10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=6A, VGS=4.5V ID=6A, VGS=2.5V ID=3A, VGS=1.8V ID=1.2A, VGS=1.5V ID=6A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3A, VDD 10V VGS=4.5V RL=3.3 RG=10 ID=6A, VDD 10V VGS=4.5V RL=1.7 RG=10
Data Sheet
Drain-source breakdown voltage V(BR)DSS
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=6A, VGS=0V
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2/5
2010.04 - Rev.A
RT1C060UN
Electrical characteristic curves
6 5 4 3 2 VGS= 1.5V 1 VGS= 1.0V 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 VGS= 1.1V VGS=10V VGS=4.5V 6 VGS= 1.2V Ta=25C Pulsed 5 4 3 2 1 VGS= 1.2V VGS= 1.1V VGS=10V VGS=4.5V VGS=2.5V VGS=1.8V VGS=1.5V VGS= 1.0V DRAIN CURRENT : ID[A] 10 1 0.1 0.01 0.001 0 0.5 1 Ta=25C Pulsed 100
Data Sheet
VDS= 10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
DRAIN CURRENT : ID[A]
VGS=2.5V VGS=1.8V
DRAIN CURRENT : ID[A]
1.5
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( )
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( )
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
Ta= 25C Pulsed 100
VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
VGS= 4.5V Pulsed 100
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
1000
1000
1000
VGS= 2.5V Pulsed
100
Ta=125C Ta=75C Ta=25C Ta= -25C
10
10
10
1 0.1 1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( ) 10
1 0.1 1 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( ) 10
1 0.1 1 10
DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( )
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
VGS= 1.8V Pulsed 100
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
1000
1000 VGS= 1.5V Pulsed 100 Ta=125C Ta=75C Ta=25C Ta= -25C
100 VDS= 10V Pulsed 10
10
10
1
Ta= -25C Ta=25C Ta=75C Ta=125C
1 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( ) 10
1 0.1 1 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( ) 10
0.1 0.01 0.1 1 10
DRAIN-CURRENT : ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current
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3/5
2010.04 - Rev.A
RT1C060UN
Data Sheet
REVERSE DRAIN CURRENT : Is [A]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
100 VGS=0V Pulsed 10
100 ID= 6A
SWITCHING TIME : t [ns]
Ta=25C Pulsed
10000 td(off) tf
1000
Ta=25C VDD=10V VGS=4.5V RG=10 Pulsed
1 Ta=125C Ta=75C Ta=25C Ta=-25C 0 0.5 1 1.5
50
ID= 3A
100 td(on)
0.1
10
tr 0 0 5 10 1 0.01 0.1 1 10
0.01
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : ID[A] Fig.12 Switching Characteristics
5 GATE-SOURCE VOLTAGE : VGS [V]
CAPACITANCE : C [pF]
Ta=25C VDD=10V 4 I = 6A D RG=10 3 Pulsed 2 1 0 0 1 2 3 4 5 6 7 8 9 101112131415 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics
10000
Ta=25C f=1MHz VGS=0V
Ciss
1000
100
Crss Coss
10 0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage
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4/5
2010.04 - Rev.A
RT1C060UN
Measurement circuits
Pulse width
Data Sheet
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10% 90%
RG
VDD
td(on) ton
90% tr td(off) toff
tf
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
VG
VGS
ID RL
VDS
VGS Qgs
Qg
IG(Const.) RG
D.U.T. VDD
Qgd
Charge
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate Charge Waveform
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5/5
2010.04 - Rev.A
Notice
Notes
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